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HUF75344A3 N-Channel UltraFET Power MOSFET
October 2007
HUF75344A3
N-Channel UltraFET Power MOSFET
55V, 75A, 8m Features
* RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A * RoHS compliant
tm
Description
* This N-channel power MOSFET is produced using Fairchild Semiconductor's innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
D
G
TO-3PN
G DS
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 130oC) - Pulsed (Note 1) Ratings 55 20 75 300 1153 288.5 1.92 -55 to +175 300 Units V V A A mJ W W/oC
oC o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.52 40 Units
o
C/W
(c)2007 Fairchild Semiconductor Corporation HUF75344A3 Rev. A1
1
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HUF75344A3 N-Channel UltraFET Power MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking HUF75344A3 Device HUF75344A3 Package TO-3PN Reel Size Tape Width Quantity 30
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25 C VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TJ = 150oC VGS = 20V, VDS = 0V
o
55 -
0.07 -
1 250 100
V V/oC A nA
On Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain to Source On Resistance VGS = VDS, ID = 250A VGS = 10V, ID = 75A 2 6.5 4 8.0 V m
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qg(10) Qg(th) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 20V Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDS = 30V ID = 75A Ig = 1mA 3650 980 135 160 86 7 17 28 4855 1305 205 208 112 9 pF pF pF nC nC nC nC nC
Switching Characteristics
tON td(on) tr td(off) tf tOFF Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 30V, ID = 75A VGS =10V, RGEN = 3 146 19 126 61 20 80 310 48 262 130 48 178 ns ns ns ns ns ns
Drain-Source Diode Characteristics
VSD trr Qrr Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s 79 270 1.25 V ns nC
Notes: 1: L = 0.41mH, IAS = 75A, VDD = 50V, VGS = 10V, RG = 25, Starting TJ = 25oC
HUF75344A3 Rev. A1
2
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HUF75344A3 N-Channel UltraFET Power MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
Figure 2. Transfer Characteristics
200
100
ID,Drain Current[A]
ID,Drain Current[A]
100
175 C
o
-55 C
o
10
25 C
o
10
7 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
*Notes: 1. VDS = 20V 2. 250s Pulse Test
1
6
1 VDS,Drain-Source Voltage[V]
2
3 4 5 VGS,Gate-Source Voltage[V]
6
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.020
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.015
100
175 C 25 C
o o
0.010
VGS = 10V
10
0.005
VGS = 20V
*Notes: 1. VGS = 0V
0.000 0 70
*Note: TJ = 25 C
o
140 210 ID, Drain Current [A]
280
350
1 0.0
2. 250s Pulse Test
0.5 1.0 VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
8000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VDS = 25V VDS = 30V VDS = 44V
6000 Capacitances [pF]
Ciss
8
*Note: 1. VGS = 0V 2. f = 1MHz
6
4000
Coss
4
2000
Crss
2
*Note: ID = 75A
0 0.1
1 10 VDS, Drain-Source Voltage [V]
25
0 0
20 40 60 80 Qg, Total Gate Charge [nC]
100
HUF75344A3 Rev. A1
3
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HUF75344A3 N-Channel UltraFET Power MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 75A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
500
100s
Figure 10. Maximum Drain Current vs. Case Temperature
160
50s
ID, Drain Current [A]
1ms
ID, Drain Current [A]
100
120
Operation in This Area is Limited by R DS(on)
10ms
80
10
DC
*Notes: 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
40
1 1
10 VDS, Drain-Source Voltage [V]
80
0 25
50 75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05 0.02
PDM t1 t2
0.01
0.01 Single pulse
*Notes: 1. ZJC(t) = 0.52 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
1E-3 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
HUF75344A3 Rev. A1
4
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HUF75344A3 N-Channel UltraFET Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
HUF75344A3 Rev. A1
5
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HUF75344A3 N-Channel UltraFET Power MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
HUF75344A3 Rev. A1
6
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HUF75344A3 N-Channel UltraFET Power MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
HUF75344A3 Rev. A1
7
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HUF75344A3 N-Channel UltraFET Power MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
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PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
8 HUF75344A3 Rev. A1
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